On October 2nd, 2024, professor Yonggang Zhen's research group of Beijing University of Chemical Technology (BUCT) published a research paper entitled “In situ continuous hydrogen-bonded engineering for intrinsically stretchable and healable high-mobility polymer semiconductors” in Science Advances.
This paper by Yonggang Zhen's group demonstrates that a regular sequence structure with continuous hydrogen bonding sites facilitated the formation of big nanofibers with a high degree of aggregation, providing the loose and porous thin film with simultaneously improved charge transport, stretchability, and self-healability. The mobility of damaged devices can be recovered to 81% after a healing treatment. Fully stretchable transistor based on the designed polymer exhibited a greatly enhanced mobility up to 1.08 square centimeters per volt per second under 100% strain, which is an unprecedented value and constitutes a major step for the development of intrinsically stretchable and healable semiconducting polymers.
Original link:https://www.science.org/doi/10.1126/sciadv.adq0171